Forming structures that include a relaxed or pseudo-relaxed layer on a substrate
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsBruno Ghyselen, Carlos Mazure, Emmanuel Arene
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Abstract
A method for forming a structure that includes a relaxed or pseudo-relaxed layer on a substrate. The method includes the steps of growing an elastically stressed layer of semiconductor material on a donor substrate; forming a glassy layer of a viscous material on the stressed layer; removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate material; patterning the stressed layer; and heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer and form the relaxed or pseudo-relaxed layer of the structure.
Claims9
1-20. (canceled)
A method for relaxing a layer of a strained material on a substrate which method comprises:
- providing an elastically stressed layer on a first substrate;
- providing a first glassy layer on the stressed layer or upon a second substrate;
- bonding the first and second substrates together with the stressed layer and first glassy layer therebetween;
- removing the first substrate to obtain a structure comprising the stressed layer, first glassy layer and second substrate;
- providing a second glassy layer on the stressed layer;
- and
- heat treating the structure at a temperature close to or higher than the viscosity temperature of one or both of the glassy layers to convert the stressed layer to a relaxed or pseudo-relaxed layer.
Dependencies are inferred from the claim text.