Storage capacitor having an increased aperture ratio and method of manufacturing the same

A method of manufacturing a storage capacitor having an increased aperture ratio, which is formed simultaneously with a thin-film-transistor, comprising the following steps of:

• providing a substrate having a metal layer disposed thereon, and said metal layer is covered correspondingly with a first dielectric layer and a second dielectric layer in sequence;
• forming a photoresist layer with a uniform thickness to cover said second dielectric layer;
• performing a process of exposure-to-light and development to said photoresist layer sequentially, so that said uniform thickness of said photoresist layer is less than its original thickness after said process;
• removing said photoresist layer and etching a portion of said second dielectric layer that is correspondingly disposed over said metal layer, wherein said thickness of said portion of said second dielectric layer is less than its original thickness after etching, and an etching depth of said portion is greater than said etching depth of said other remaining portions of said second dielectric layer;
• and
• forming an electrode layer on said second dielectric layer.