Method of manufacturing doping patterns
AssigneeUnited Microelectronics Corp.
InventorsHuan-Ting Tseng, Chun-Hsien Huang, Hung-Chin Huang, Chen-Wei Lee
Life of this patent
Estimating the term…
Abstract
A method of manufacturing doping patterns includes providing a substrate having a plurality of STIs defining and electrically isolating a plurality of active regions in the substrate, forming a patterned photoresist having a plurality of exposing regions for exposing the active regions and the STIs in between the active regions on the substrate, and performing an ion implantation to form a plurality of doping patterns in the active regions.
Claims20
A method of manufacturing doping patterns comprising steps of:
- providing a substrate having a plurality of shallow trench isolations (STIs) formed therein, the STIs defining and electrically isolating a plurality of active regions having a same polarity;
- forming a patterned photoresist having a plurality of exposing regions for exposing the active regions and the STIs in between the active region on the substrate;
- and
- performing an ion implantation to form a plurality of doping patterns in the active regions through the patterned photoresist.
A method of manufacturing doping patterns comprising steps of:
- providing a substrate having a plurality of STIs formed therein, the STIs defining and electrically isolating a plurality of active regions having a same polarity;
- forming a plurality of first conductive layer patterns in the active regions and a plurality of second conductive layer patterns on a portion of the STIs with a conductive layer defining pattern;
- forming a patterned photoresist having a plurality of exposing regions for exposing the active regions, the first conductive layer patterns and a portion of the STIs in between the active region on the substrate;
- and
- performing an ion implantation to form a plurality of doping patterns in the active regions through the patterned photoresist.
A method of manufacturing an implantation photomask comprising steps of:
- providing a predetermined doping pattern and a STI defining pattern, the predetermined doping pattern further comprising a plurality of first dope-blocking regions and a plurality of first dope-exposing regions;
- modifying the predetermined doping pattern with STI defining pattern to form a modified doping pattern;
- and
- outputting the modified doping pattern on a photomask.
Dependencies are inferred from the claim text.