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US 2011/0217816 A1Published application
Field effect transistor and method for fabricating the same
AssigneeEudyna Devices Inc.
InventorKeita MATSUDA
Life of this patent
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Abstract
A field effect transistor includes: a nitride semiconductor layer having a channel layer; a gate electrode including a Schottky electrode that contacts the nitride semiconductor layer and includes a gallium doped zinc oxide (GZO) layer annealed in an inactive gas atmosphere; and ohmic electrodes connecting with the channel layer.
Claims9
A method for fabricating a field effect transistor, comprising:
- forming a nitride semiconductor layer on a channel layer made of nitride semiconductor;
- forming an ohmic electrode electrically connected to the channel layer;
- forming a Schottky electrode including a gallium doped zinc oxide (GZO) layer that contacts the nitride semiconductor layer, after forming the ohmic electrodes;
- and
- performing annealing of the Schottky electrode in an inactive gas atmosphere, after forming Schottky electrode.
2 more elements
Dependencies are inferred from the claim text.