Radiofrequency plasma reactor and method for manufacturing vacuum process treated substrates

A method for manufacturing a vacuum process treated substrate for a TFT or for a solar cell panel with an extent of at least 1 m2, the method comprising the steps of:

• Providing a radiofrequency plasma reactor comprising a vacuum recipient and therein a first electrode arrangement having a first electrode surface and a second electrode arrangement having a second electrode surface, said first and second electrode surfaces being distant from each other and facing each other, thereby defining a plasma discharge space there between, the first electrode arrangement comprising a metal Rf supply electrode, operationally connectable to a first pole of an Rf power supply and having a metal surface extending substantially along and distant from said first electrode surface, a dielectric spacing upon said metal surface and extending substantially along said metal surface, the thickness of said dielectric spacing, perpendicular to said metal surface, varying along said metal surface, said second electrode arrangement being operationally connectable to a second pole of an Rf power supply,
• wherein said first electrode surface comprises a multitude of surfaces of a multitude of metal members residing on said dielectric spacing, at least the majority of said members being mounted in an electrically floating manner,
• operationally connecting said poles to an Rf power source operating at a frequency of at least 10 MHz;
• providing a substrate to be treated into said plasma discharge space;
• inletting a gas or gas mixture into said plasma discharge space;
• and
• treating said substrate in a plasma in said plasma discharge space, electrically supplied by said power source and in an atmosphere containing said gas.