Semiconductor device and method of manufacturing the same

Abstract

A method of manufacturing a semiconductor device is disclosed. The method comprises: applying a sensing layer with variation in a secondary attribute according to heat, on a handle wafer; patterning the sensing layer, thus forming a cavity; forming a sensing part pattern having a beam structure in the cavity; forming a light-absorbing layer for converting energy of incident photons into heat, along the sensing part pattern; turning the entire structure over, removing the handle wafer, and thus exposing a rear portion of the sensing part pattern; and forming an additional light-absorbing layer on a rear portion of the light-absorbing layer formed on the sensing part pattern, thereby forming a sensing structure part having a beam structure. The method may further comprises: after the forming of the light-absorbing layer for converting the energy of the incident photons into the heat, forming on the light-absorbing layer a filling layer to fill up the cavity, and after the forming of the additional light-absorbing layer, selectively removing the filling layer and exposing the sensing structure part in a manner to float it over the cavity.

Dependencies are inferred from the claim text.