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US 2011/0217801 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
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Abstract
A high performance electric device which uses an adhesive layer over a substrate. A color filter is over a substrate, and an adhesive layer is also located over the substrate and color film. An insulating layer is over the adhesive layer, and thin film transistors cover the insulating film and the color filters. Light emitting elements cover the thin film transistors and emit light through the substrate that is through the adhesive layer and color filter. The substrate may be plastic, thus increasing the heat resistance.
Claims7
A method of manufacturing a semiconductor device comprising the steps of:
- forming a separating layer on a first substrate;
- forming an insulating film on said separating layer;
- forming an active layer, a gate insulating film, and gate electrodes on said insulating film;
- forming a first inter-layer insulating film so as to cover said gate electrodes;
- forming wiring and pixel electrodes on said first interlayer insulating film;
- attaching a fixing substrate provided with an opposing electrode on said first substrate using a sealant;
- injecting liquid crystal between said pixel electrodes and said opposing electrode;
- removing said separating layer by exposing said separating layer to gas containing halogen fluoride to separate said first substrate;
- and
- attaching a second substrate to said insulating film using an adhesive layer,
- wherein said second substrate has color filters provided thereon.
8 more elements
Dependencies are inferred from the claim text.