Gas barrier film, film deposition method, and film deposition device
AssigneeFUJIFILM Corporation
InventorHiroyuki NISHIDA
Life of this patent
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Abstract
A gas barrier film includes: a base film; and a silicon nitride layer deposited on a surface of the base film, wherein in a direction of a thickness of the silicon nitride layer, a first mean density of a region of the silicon nitride layer closer to the base film and having a 20% thickness of the silicon nitride layer is lower than a second mean density of a region opposite from the base film and having a 20% thickness of the silicon nitride layer, and a third mean density of a middle region having a 20% thickness of the silicon nitride layer lies between the first mean density and the second mean density.
Claims16
A gas barrier film comprising:
- a base film;
- and
- a silicon nitride layer deposited on a surface of the base film,
- wherein in a direction of a thickness of the silicon nitride layer, a first mean density of a region of the silicon nitride layer closer to the base film and having a 20% thickness of the silicon nitride layer is lower than a second mean density of a region opposite from the base film and having a 20% thickness of the silicon nitride layer, and a third mean density of a middle region having a 20% thickness of the silicon nitride layer lies between the first mean density and the second mean density.
A film deposition method comprising the steps of:
- transporting a base film in a given direction;
- introducing a material gas containing a gas that generates silane radicals while creating gas flow of the material gas in the opposite direction as the base film transport direction;
- and
- depositing a silicon nitride layer on a surface of the base film by plasma-enhanced CVD.
A film deposition device comprising:
- a transport means of transporting a base film;
- a film deposition means including a material gas introduction means of introducing a material gas containing a gas that generates silane radicals and a plasma generating means;
- and
- a gas flow creating means for creating a material gas flow in the opposite direction as a transport direction of the base film,
- a silicon nitride layer being deposited on a surface of the base film by plasma-enhanced CVD.
Dependencies are inferred from the claim text.