Method for processing a chemical vapor deposition (cvd) and a cvd device using the same

A CVD device comprising:

• a case having a CVD space inside and being connected to a source gas supply pipe supplying a source gas to the CVD space;
• an outer heater provided outside of the case;
• a pair of electrode mounts spaced out within the CVD space and retaining both ends of a silicon substrate for applying the CVD process;
• and
• an electric power-supply apparatus applying current to the silicon substrate through the electrode mounts and supplying electric power to the outer heater,
• wherein the electric power-supply apparatus has a controller which heats electrically the silicon substrate to certain temperature at which the CVD process can be started by heating the silicon substrate with the outer heater following reduction of resistance value of the silicon substrate, and reduces an atmosphere temperature of the CVD space by stopping the outer heater before a supply of source gas to the CVD space through the source gas supply pipe.