System and process for calibrating pyrometers in thermal processing chambers

A process, comprising:

• placing a semiconductor wafer within a thermal processing chamber, the thermal processing chamber comprising a first temperature measuring device configured to detect thermal radiation emitted from the semiconductor wafer, the thermal processing chamber being in communication with a lamp heat source, the thermal processing chamber comprising a second temperature measuring device comprising at least one light source and at least one light detector, the at least one light source configured to be controlled independently from the lamp heat source, the second temperature measuring device configured to determine the temperature of the semiconductor wafer based on a temperature dependence of an optical property of the semiconductor wafer;
• detecting thermal radiation emitted from a first location on the semiconductor wafer with the first temperature measuring device, the first location being positioned at a first radial distance from the center of the semiconductor wafer;
• radiating light energy from the at least one light source onto a second location on the semiconductor wafer;
• and
• detecting the light energy transmitted through or reflected from the semiconductor wafer with the at least one light detector;
• wherein the second location is located at a second radial distance from the center of the semiconductor wafer, the difference between the first radial distance and the second radial distance being no greater than about 5 cm.

A system, comprising:

• a chamber adapted to receive at least one semiconductor wafer;
• a lamp heat source in communication with said chamber;
• a first temperature measuring device configured to detect radiation thermally emitted from a first location on the semiconductor wafer, the first location being positioned at a first radial distance from the center of the semiconductor wafer;
• a second temperature measuring device configured to determine the temperature of the semiconductor wafer based on a temperature dependence of an optical property of the semiconductor wafer, the second temperature measuring device comprising at least one light source that radiates light energy onto a second location on the semiconductor wafer, the at least one light source configured to be controlled independently of the lamp heat source, the second temperature measuring device further comprising at least one light detector positioned to detect the light energy from the light source after the light energy has been transmitted through or reflected from the second location, the second location being positioned a second radial distance from the center of the semiconductor wafer, the difference between the first radial distance and the second radial distance being no greater than about 5 cm;
• and
• an optical system configured to receive the radiation thermally emitted from the first location and the light energy transmitted through or reflected from the second location;
• wherein the optical system is configured to transmit the radiation thermally emitted from the first location to the first temperature measuring device and to transmit the light energy transmitted through or reflected from the second location to the at least one light detector.