Semiconductor laser device
AssigneeKabushiki Kaisha Toshiba
InventorsRei Hashimoto, Maki Sugai, Jongil Hwang, Yasushi Hattori, Shinji Saito, Masaki Tohyama, Shinya Nunoue
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Abstract
According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of grooves formed by etching into the p-type semiconductor layer, a stripe sandwiched by the pair of grooves and having shape of ridge, and a pair of buried layers made of insulator to bury the grooves. The bottom surfaces of the grooves are shallower with an increase in distance from the stripe.
Claims12
A semiconductor laser device comprising:
- an active layer;
- a p-type semiconductor layer on the active layer;
- a pair of grooves formed by etching into the p-type semiconductor layer;
- a stripe sandwiched by the pair of grooves and having a shape of ridge;
- and
- a pair of buried layers made of insulator to bury the grooves, wherein
- bottom surfaces of the grooves are shallower with an increase in distance from the stripe.
A semiconductor laser device comprising:
- an active layer;
- a p-type semiconductor layer on the active layer;
- a stripe formed in the p-type semiconductor layer and having a shape of ridge;
- a pair of grooves formed in the p-type semiconductor layer, on both side of the stripe;
- and
- a pair of buried layers made of insulator to bury the grooves, wherein
- bottom surfaces of the grooves are shallower with an increase in distance from the stripe.
Dependencies are inferred from the claim text.