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US 2011/0216795 A1Published application
Semi-polar iii-nitride optoelectronic devices on m-plane substrates with miscuts less than +/-15 degrees in the c-direction
AssigneeThe Regents of the University of California
InventorsPo Shan Hsu, Kathryn M. Kelchner, Robert M. Farrell, Daniel A. Haeger, Hiroaki Ohta, Anurag Tyagi, Shuji Nakamura, Steven P. DenBaars, S. James Speck
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Abstract
An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15<x<−1 and 1<x<15 degrees.
Claims27
An optoelectronic device, comprising:
- one or more III-Nitride layers epitaxially grown on a semi-polar crystal plane of GaN, wherein the semi-polar crystal plane is oriented x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15<x<−1 and 1<x<15 degrees.
A method of fabricating an optoelectronic device, comprising:
- depositing III-Nitride layers epitaxially on a semi-polar crystal plane, wherein the semi-polar crystal plane is oriented x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15<x<−1 and 1<x<15 degrees.
Dependencies are inferred from the claim text.