Semiconductor laser device
AssigneeTechnische Universiteit Eindhoven
InventorsBoudewijn Docter, Stefano Beri, Meint Koert Smit, Fouad Karouta
Life of this patent
Estimating the term…
Loading patent…
AssigneeTechnische Universiteit Eindhoven
InventorsBoudewijn Docter, Stefano Beri, Meint Koert Smit, Fouad Karouta
Estimating the term…
The present invention is directed to a semiconductor laser device comprising a first resonator section for resonating an optical resonator signal for providing an optical output signal at an output of said laser device, wherein said first resonator section is arranged for selectively resonating at a plurality of discrete output wavelengths, and wherein said laser device further comprises a second resonator section operatively connected to said first resonator section, said second resonator section being arranged for providing an optical feedback signal at a feedback wavelength to said first resonator section for locking said first resonator section into resonating at a selected output wavelength of said discrete output wavelengths, which selected output wavelength corresponds to said feedback wavelength for providing said optical output signal.
Semiconductor laser device comprising a first resonator section for resonating an optical resonator signal for providing an optical output signal at an output of said laser device, wherein said first resonator section is arranged for selectively resonating at a plurality of discrete output wavelengths, and wherein said laser device further comprises a second resonator section operatively connected to said first resonator section, said second resonator section being arranged for providing an optical feedback signal at a feedback wavelength to said first resonator section for locking said first resonator section into resonating at a selected output wavelength of said discrete output wavelengths, which selected output wavelength corresponds to said feedback wavelength for providing said optical output signal.
Semiconductor laser device according to claim 6, wherein said at least one tunable cavity comprises a tunable grating for selectively resonating at one of said plurality of discrete cavity wavelengths.
Semiconductor laser device according to claim 7, wherein said tunable grating is a tunable sampled grating or a tunable vertical groove grating.
Dependencies are inferred from the claim text.