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US 2011/0216585 A1Published application
Metal containing materials
AssigneeMicron Technology, Inc.
InventorJaydeb Goswami
Life of this patent
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Abstract
Metal containing materials and methods of forming the same are disclosed. One such method includes substantially concurrently feeding a flow of precursor gas containing a metal of a metal containing material and a flow of source gas containing a reducing agent so that the precursor gas and the source gas react to form a thickness of the metal containing material. The flow of precursor gas is discontinued, and while the flow of precursor gas is discontinued, the flow of source gas continues to be fed to contact the thickness of the metal containing material.
Claims28
A method of forming a metal containing material, comprising:
- for a first portion of a processing cycle:
- substantially concurrently feeding a flow of a precursor gas containing the metal of the metal containing material and a flow of a source gas containing a reducing agent, and reacting the precursor gas and the source gas to form a thickness of the metal containing material;
- and
- for a second portion of the processing cycle subsequent to the first portion of the processing cycle:
- discontinuing the flow of the precursor gas;
- and
- continuing to feed the flow of the source gas to contact the thickness of the metal containing material while not feeding the flow of the precursor gas.
4 more elements
A method of forming a memory cell, comprising:
- forming a dielectric over a semiconductor;
- forming a gate over the charge storage node, wherein the gate comprises one or more thicknesses of metal containing material, wherein forming a respective thickness of the metal containing material of the one or more thicknesses of the metal containing material comprises:
- for a first portion of a processing cycle:
- substantially concurrently feeding a flow of a precursor gas containing the metal of the metal containing material and a flow of a source gas containing a reducing agent, and reacting the precursor gas and the source gas to form the respective thickness of the metal containing material;
- and
- for a second portion of the processing cycle subsequent to the first portion of the processing cycle:
- discontinuing the flow of the precursor gas;
- and
- continuing to feed the flow of the source gas to contact the respective thickness of the metal containing material while not feeding the flow of the precursor gas.
6 more elements
A memory cell, comprising:
- a dielectric over a semiconductor;
- a gate over the dielectric, the gate comprising one or more thicknesses of metal containing material, wherein a respective thickness of the metal containing material of the one or more thicknesses of the metal containing material is formed using a method comprising:
- for a first portion of a processing cycle:
- substantially concurrently feeding a flow of a precursor gas containing the metal of the metal containing material and a flow of a source gas containing a reducing agent, and reacting the precursor gas and the source gas to form a thickness of the metal containing material;
- and
- for a second portion of the processing cycle subsequent to the first portion of the processing cycle:
- discontinuing the flow of the precursor gas;
- and
- continuing to feed the flow of the source gas to contact the thickness of the metal containing material while not feeding the flow of the precursor gas.
6 more elements
A memory device, comprising:
- an array of memory cells;
- and
- control circuitry configured to access the array of memory cells;
- wherein the array of memory cells comprises a plurality of non-volatile memory cells;
- and
- wherein at least one memory cell of the array of memory cells comprises a gate comprising at least one metal containing material formed using a method comprising:
- for a first portion of a processing cycle:
- substantially concurrently feeding a flow of a precursor gas containing the metal of the metal containing material and a flow of a source gas containing a reducing agent, and reacting the precursor gas and the source gas to form a thickness of the metal containing material;
- and
- for a second portion of the processing cycle subsequent to the first portion of the processing cycle:
- discontinuing the flow of the precursor gas;
- and
- continuing to feed the flow of the source gas to contact the thickness of the metal containing material while not feeding the flow of the precursor gas.
10 more elements
Dependencies are inferred from the claim text.