Nonvolatile memory device and nonvolatile memory apparatus
AssigneeKabushiki Kaisha Toshiba
InventorsTakeshi Yamaguchi, Chikayoshi Kamata
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Abstract
According to one embodiment, a nonvolatile memory device includes a recording layer and a conductive first layer. The recording layer includes a main group element, a transition element, and oxygen. The recording layer is capable of recording information by changing reversibly between a high resistance state and a low resistance state. The first layer is made of at least one selected from a metal, a metal oxide, a metal nitride, and a metal carbide. The first layer is provided adjacent to the recording layer. The first layer includes the main group element with a concentration lower than a concentration of the main group element of the recording layer.
Claims23
A nonvolatile memory device, comprising:
- a recording layer including
- a main group element,
- a transition element, and
- oxygen,
- the recording layer being capable of recording information by changing reversibly between a high resistance state and a low resistance state;
- and
- a conductive first layer made of at least one selected from a metal, a metal oxide, a metal nitride, and a metal carbide and provided adjacent to the recording layer, the first layer including the main group element with a concentration lower than a concentration of the main group element of the recording layer.
A nonvolatile memory apparatus, comprising:
- a nonvolatile memory device, including:
- a recording layer including
- a main group element,
- a transition element, and
- oxygen,
- the recording layer being capable of recording information by changing reversibly between a high resistance state and a low resistance state;
- and
- a conductive first layer made of at least one selected from a metal, a metal oxide, a metal nitride, and a metal carbide and provided adjacent to the recording layer, the first layer including the main group element with a concentration lower than a concentration of the main group element of the recording layer;
- and
- a drive unit configured to record information by causing the recording layer to transition between the high resistance state and the low resistance state by at least one selected from applying a voltage to the recording layer of the nonvolatile memory device and causing a current to flow in the recording layer.
Dependencies are inferred from the claim text.