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US 2011/0216566 A1Published application
Semiconductor device and method for manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorKoichiro KAMATA
Life of this patent
Estimating the term…
Abstract
In a rectifier circuit, by using a transistor whose off-state current is small as a so-called diode-connected MOS transistor included in the rectifier circuit, breakdown which is caused when a reverse bias is applied is prevented. Thus, an object is to provide a rectifier circuit whose reliability is increased and rectification efficiency is improved. A gate and a drain of a transistor are both connected to a terminal of the rectifier circuit to which an AC signal is input. In the transistor, an oxide semiconductor is used for a channel formation region and the off-state current at room temperature is less than or equal to 10−20 A/μm, which is equal to 10 zA/μm (z: zepto), when the source-drain voltage is 3.1 V.
Claims12
A semiconductor device comprising:
- a rectifier circuit comprising:
- a transistor;
- an input terminal;
- a capacitor;
- and
- an output terminal,
- wherein a gate of the transistor and one of a source and a drain of the transistor are electrically connected to the input terminal,
- wherein the other of the source and the drain of the transistor and an electrode of the capacitor are electrically connected to the output terminal,
- wherein the transistor comprises a channel formation region comprising an oxide semiconductor, and
- wherein a carrier density in the oxide semiconductor is lower than 1×1014/cm3.
7 more elements
A semiconductor device comprising:
- a rectifier circuit comprising:
- a first transistor;
- a second transistor;
- an input terminal;
- a first capacitor;
- a second capacitor;
- and
- an output terminal,
- wherein a first electrode of the first capacitor is electrically connected to the input terminal,
- wherein one of a source and a drain of the first transistor, a gate of the first transistor, and one of a source and a drain of the second transistor are electrically connected to a second electrode of the first capacitor,
- wherein the other of the source and the drain of the first transistor and a first electrode of the second capacitor are electrically connected to the output terminal,
- wherein a gate of the second transistor, and the other of the source and the drain of the second transistor are electrically connected to a second electrode of the second capacitor,
- wherein each of the first transistor and the second transistor comprises a channel formation region comprising an oxide semiconductor, and
- wherein a carrier density in the oxide semiconductor is lower than 1×1014/cm3.
11 more elements
A wireless communication device comprising:
- an antenna, and
- a rectifier circuit comprising:
- a transistor;
- an input terminal;
- a capacitor;
- and
- an output terminal,
- wherein a gate of the transistor and one of a source and a drain of the transistor are electrically connected to the input terminal,
- wherein the other of the source and the drain of the transistor and an electrode of the capacitor are electrically connected to the output terminal,
- wherein the transistor comprises a channel formation region comprising an oxide semiconductor,
- wherein a carrier density in the oxide semiconductor is lower than 1×1014/cm3, and
- wherein an AC signal received by the antenna is inputted into the input terminal.
9 more elements
A wireless communication device comprising:
- an antenna, and
- a rectifier circuit comprising:
- a first transistor;
- a second transistor;
- an input terminal;
- a first capacitor;
- a second capacitor;
- and
- an output terminal,
- wherein a first electrode of the first capacitor is electrically connected to the input terminal,
- wherein one of a source and a drain of the first transistor, a gate of the first transistor, and one of a source and a drain of the second transistor are electrically connected to a second electrode of the first capacitor,
- wherein the other of the source and the drain of the first transistor and a first electrode of the second capacitor are electrically connected to the output terminal,
- wherein a gate of the second transistor, and the other of the source and the drain of the second transistor are electrically connected to a second electrode of the second capacitor,
- wherein each of the first transistor and the second transistor comprises a channel formation region comprising an oxide semiconductor,
- wherein a carrier density in the oxide semiconductor is lower than 1×1014/cm3, and
- wherein an AC signal received by the antenna is inputted into the input terminal.
13 more elements
A method for manufacturing a semiconductor device comprising a rectifier circuit, the rectifier circuit comprising a transistor, an input terminal, a capacitor, and an output terminal,
- wherein a gate of the transistor and one of a source and a drain of the transistor are electrically connected to the input terminal, and
- wherein the other of the source and the drain of the transistor and an electrode of the capacitor are electrically connected to the output terminal,
- the method comprising the steps of:
- forming a first oxide semiconductor;
- performing first heat treatment for removing hydrogen, water, and a hydroxyl group on the first oxide semiconductor so that a second oxide semiconductor is formed;
- performing second heat treatment for repairing oxygen deficiency in the second oxide semiconductor in an oxygen atmosphere or an atmosphere comprising nitrogen and oxygen, successively to the first heat treatment, so that a third oxide semiconductor is formed;
- and
- forming the transistor comprising a channel formation region comprising the third oxide semiconductor.
5 more elements
A method for manufacturing a semiconductor device comprising a rectifier circuit, the rectifier circuit comprising a first transistor, a second transistor, an input terminal, a first capacitor, a second capacitor, and an output terminal,
- wherein a first electrode of the first capacitor is electrically connected to the input terminal,
- wherein one of a source and a drain of the first transistor, a gate of the first transistor, and one of a source and a drain of the second transistor are electrically connected to a second electrode of the first capacitor,
- wherein the other of the source and the drain of the first transistor and a first electrode of the second capacitor are electrically connected to the output terminal, and
- wherein a gate of the second transistor, and the other of the source and the drain of the second transistor are electrically connected to a second electrode of the second capacitor,
- the method comprising the steps of:
- forming a first oxide semiconductor;
- performing first heat treatment for removing hydrogen, water, and a hydroxyl group on the first oxide semiconductor so that a second oxide semiconductor is formed;
- performing second heat treatment for repairing oxygen deficiency in the second oxide semiconductor in an oxygen atmosphere or an atmosphere comprising nitrogen and oxygen, successively to the first heat treatment, so that a third oxide semiconductor is formed;
- and
- forming the first transistor and the second transistor each comprising a channel formation region comprising the third oxide semiconductor.
7 more elements
A method for manufacturing a wireless communication device comprising a rectifier circuit and an antenna, the rectifier circuit comprising a transistor, an input terminal, a capacitor, and an output terminal,
- wherein a gate of the transistor and one of a source and a drain of the transistor are electrically connected to the input terminal,
- wherein the other of the source and the drain of the transistor and an electrode of the capacitor are electrically connected to the output terminal, and
- wherein an AC signal is a signal received by the antenna,
- the method comprising the steps of:
- forming a first oxide semiconductor;
- performing first heat treatment for removing hydrogen, water, and a hydroxyl group on the first oxide semiconductor so that a second oxide semiconductor is formed;
- performing second heat treatment for repairing oxygen deficiency in the second oxide semiconductor in an oxygen atmosphere or an atmosphere comprising nitrogen and oxygen, successively to the first heat treatment, so that a third oxide semiconductor is formed;
- and
- forming the transistor comprising a channel formation region comprising the third oxide semiconductor.
6 more elements
A method for manufacturing a wireless communication device comprising a rectifier circuit and antenna, the rectifier circuit comprising a first transistor, a second transistor, an input terminal, a first capacitor, a second capacitor, and an output terminal,
- wherein a first electrode of the first capacitor is electrically connected to the input terminal,
- wherein one of a source and a drain of the first transistor, a gate of the first transistor, and one of a source and a drain of the second transistor are electrically connected to a second electrode of the first capacitor,
- wherein the other of the source and the drain of the first transistor and a first electrode of the second capacitor are electrically connected to the output terminal,
- wherein a gate of the second transistor, and the other of the source and the drain of the second transistor are electrically connected to a second electrode of the second capacitor, and
- wherein an AC signal is a signal received by the antenna,
- the method comprising the steps of:
- forming a first oxide semiconductor;
- performing first heat treatment for removing hydrogen, water, and a hydroxyl group on the first oxide semiconductor so that a second oxide semiconductor is formed;
- performing second heat treatment for repairing oxygen deficiency in the second oxide semiconductor in an oxygen atmosphere or an atmosphere comprising nitrogen and oxygen, successively to the first heat treatment, so that a third oxide semiconductor is formed;
- and
- forming the first transistor and the second transistor each comprising a channel formation region comprising the third oxide semiconductor.
8 more elements
Dependencies are inferred from the claim text.