Protection for an integrated circuit
AssigneeNXP B.V.
InventorsHans-Martin Ritter, Ingo Laasch
Life of this patent
Estimating the term…
Abstract
The present invention relates to a discharge structure for an overvoltage and/or overcurrent protection, in particular to a discharge structure for an electrostatic discharge (ESD) protection, for an integrated circuit (IC), and to an ESD protection device for an IC comprising such a discharge structure and to a method for making such a structure. The present invention particularly relates to such a discharge structure (50, 52) which comprises at least two discharge paths (40, 80) provided to conduct a current to a terminal (60), whereas substantially all of the discharge paths (40, 80) present substantially the same resistance for the current.
Claims16
Discharge structure for an overvoltage and/or overcurrent protection for an IC, in particular for an ESD protection for an IC, comprising:
- at least two discharge paths provided to conduct a current to a terminal, wherein substantially all of the discharge paths present substantially the same resistance for the current.
Dependencies are inferred from the claim text.