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AssigneeFUJIFILM Corporation
InventorsNoriko KAWAMURA, Tomoyuki KAWAI
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A solid-state image sensing element includes a plurality of pixels, a color filter, a plurality of vertical charge transfer paths, a plurality of readout electrode portions. The pixels are formed on one face of a semiconductor substrate in a two-dimensional array arrangement. The color filter corresponds to a plurality of colors and includes a plurality of color filter elements disposed color by color on the pixels respectively so as to be arranged as a mosaic pattern as a whole. The vertical charge transfer paths are formed one by one between two of pixel columns composed of the pixels so that each of the vertical charge transfer paths transfers signal corresponding to one of the colors. The readout electrode portions connect each of the vertical charge transfer paths to pixels arranged in both sides of each of the vertical charge transfer paths.
A solid-state image sensing element comprising:
A method for driving a solid-state image sensing element including a first pixel group and a second pixel group, the method comprising controlling exposure time of the first pixel group and exposure time of the second pixel group separately.
A method for driving a solid-state image sensing element, the method comprising:
A method for driving a solid-state image sensing element including a first pixel group and a second pixel group, the method comprising reading out only signals detected by pixels in one of the first pixel group and the second pixel group while discarding signals detected by pixels in the other pixel group.
A method for driving a solid-state image sensing element including a first pixel group and a second pixel group, the method comprising:
An image pickup device comprising a solid-state image sensing element that includes:
Dependencies are inferred from the claim text.