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US 2011/0215840 A1Published application
Gate drive circuit
AssigneeSanken Electric Co., Ltd.
InventorOSAMU MACHIDA
Life of this patent
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Abstract
A switch device comprised of a wide band gap semiconductor is provided. The switch device comprises a drain, a source, a gate and a gate voltage clamp circuit, which is connected between a signal terminal, to which a signal for driving the gate is input, and the gate through a series circuit of a capacitor and a resistance, and which comprises a diode and a voltage limiter circuit provided between the drain and the gate.
Claims6
A switch device comprised of a wide band gap semiconductor, the switch device comprising:
- a drain;
- a source;
- a gate;
- and
- a gate voltage clamp circuit that is connected between a signal terminal, to which a signal for driving the gate is input, and the gate through a series circuit of a capacitor and a resistance, wherein the gate voltage clamp circuit comprises a diode and a voltage limiter circuit provided between the drain and the gate.
2 more elements
A gate drive circuit comprising:
- a switch device comprised of a wide band gap semiconductor, wherein the switch device comprising:
- a drain;
- a source;
- and
- a gate;
- and
- a signal terminal to which a signal for driving the gate is input,
- wherein the signal terminal is connected to an input terminal of a buffer circuit through a capacitor, an output terminal of the buffer circuit is connected to the gate terminal of the switch device through a gate resistance, and a gate voltage clamp circuit comprising a diode and a voltage limiter circuit is provided between the drain of the switch device and the input terminal of the buffer circuit.
5 more elements
Dependencies are inferred from the claim text.