Low noise magnetic field sensor using a lateral spin transfer
AssigneeCommissariat a l'Energie Atomique
InventorBernard DIENY
Life of this patent
Estimating the term…
Abstract
The present invention relates to a magnetoresistive sensor comprising a first pinned-magnetization magnetic layer (410), called pinned layer, and a free-magnetization magnetic layer (430), called sensitive layer, of which the magnetization, in the absence of an external field, is substantially orthogonal to the magnetization of the pinned layer, said pinned and sensitive layers being separated by a first separating layer (420) for magnetic uncoupling. The sensor further comprises a layer (440), called lateral coupling layer, located on the side of the sensitive layer opposite that of the separating layer, and serving to control the lateral spin transfer.
Claims31
A magnetoresistive sensor comprising a first pinned-magnetization magnetic layer (410), called pinned layer, and a free-magnetization magnetic layer (430), called sensitive layer, of which the magnetization, in the absence of an external field, is substantially orthogonal to the magnetization of the pinned layer, said pinned and sensitive layers being separated by a first separating layer (420) for magnetic uncoupling, wherein it further comprises a layer (440), called lateral coupling layer, located on the side of the sensitive layer opposite that of the separating layer and suitable for backscattering the electrons, with conservation of spin, to the sensitive layer, and also means for circulating a continuous current from the lateral coupling layer to the pinned layer.
A magnetoresistive sensor comprising a first pinned-magnetization magnetic layer (410), called pinned layer, and a free-magnetization magnetic layer (430), called sensitive layer, of which the magnetization, in the absence of an external field, is substantially orthogonal to the magnetization of the pinned layer, said pinned and sensitive layers being separated by a first separating layer (420) for magnetic uncoupling, wherein it further comprises a layer (440), called lateral coupling layer, located on the side of the sensitive layer opposite that of the separating layer and suitable for reducing the sidescattering of the electrons and/or for producing a loss of spin memory, and also means for circulating a continuous current from the pinned layer to the lateral coupling layer.
The magnetoresistive sensor as claimed in one of the preceding claims, wherein it further comprises a synthetic ferrimagnetic layer, consisting of first and second magnetic sub-layers containing an antiferromagnetic coupling sub-layer in a sandwich, the first magnetic sub-layer being pinned by a pinning antiferromagnetic layer, the second magnetic sub-layer constituting said pinned layer (410).
The magnetoresistive sensor as claimed in one of the preceding claims, wherein the sensitive layer consists of CoFe alloy, in particular Co90Fe10.
Dependencies are inferred from the claim text.