Semiconductor device

A semiconductor device comprising:

• a third semiconductor element which is current driven and performs power conversion;
• a third gate drive circuit and a fourth gate drive circuit which control the power conversion by said third semiconductor element;
• and
• a connection terminal unit,
• wherein said third semiconductor element includes:
• a stacked structure including nitride semiconductor layers stacked above a substrate;
• a first gate electrode and a second gate electrode formed adjacent to each other on said stacked structure;
• a third ohmic electrode and a fourth ohmic electrode each of which is formed, above the substrate, on a different side of said first gate electrode and said second gate electrode;
• a first gate electrode pad and a second gate electrode pad respectively wired from said first gate electrode and said second gate electrode on said third semiconductor element;
• and
• a third ohmic electrode pad and a fourth ohmic electrode pad respectively wired from said third ohmic electrode and said fourth ohmic electrode on said third semiconductor element,
• said connection terminal unit includes:
• a third ohmic electrode terminal connected to said third ohmic electrode pad through a first connection material;
• a fourth ohmic electrode terminal connected to said fourth ohmic electrode pad through a second connection material;
• a first gate drive terminal connected to said third ohmic electrode pad through a third connection material;
• a second gate drive terminal connected to said fourth ohmic electrode pad through a fourth connection material;
• a first gate terminal connected to said first gate electrode pad through a fifth connection material;
• and
• a second gate terminal connected to said second gate electrode pad through a sixth connection material,
• an input terminal and an output terminal of said third gate drive circuit are respectively connected to said first gate drive terminal and said first gate terminal, and a potential of said third ohmic electrode pad corresponds to a reference potential of said third gate drive circuit, and
• an input terminal and an output terminal of said fourth gate drive circuit are respectively connected to said second gate drive terminal and said second gate terminal, and a potential of said fourth ohmic electrode pad corresponds to a reference potential of said fourth gate drive circuit.