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US 2011/0215676 A1Published application
Process for the preparation of piezoelectric crystal elements and a product thereof
AssigneeCtg Advanced Materials, LLC
InventorPENGDI HAN
Life of this patent
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Abstract
A process for the preparations of piezoelectric single crystal elements involving the steps of mechanically finishing a single crystal element with select cuttings, coating electrodes on a pair of Z surfaces, poling the single crystal along the 011/axis under a 500V/mm electric field and a product made by the process thereof.
Claims4
1-10. (canceled)
A piezoelectric single crystal product made by the process of:
- (a) providing a piezoelectric crystal element with a cutting direction along zxt ±45°;
- (i) said single crystal element providing a PbZy(Mg1/2Nb2/3)1-x-yTixO3;
- wherein Y is defined as from 0 to 0.10, X is defined as 0.20 to 0.35, and Z is defined as at least one doped element selected from the group consisting of:
- Zr, Hf, Sn, In, Sc, Tm, Nb, Ta, Zn, Yb, Lu, Sb, Bi, Mn, Ga, Ce, Ni, W, Cu, Fe, K, Na, Li, and Ba;
- (b) said single crystal element made by the me mechanically finishing said single crystal with cuttings along zxt ±45°;
- (c) coating electrodes on a pair of Z surfaces;
- (d) poling said single crystal element to a first poled state in the direction along <011> cubic axis under a 500V/mm electrical field at room temperature and forming a poled single crystal element;
- and
- (e) providing said poled single crystal element with an operable d36 shear mode and having a d36 value up to about 2600 pC/N at room temperature.
6 more elements
A method for preparation of a single crystal element, comprising the steps of:
- providing a single crystal element;
- said single crystal element being a piezoelectric crystal element with a cutting direction along zxt ±22.5°;
- said single crystal element providing a PbZy(Mg1/2Nb2/3)1-x-yTixO3;
- wherein Y is defined as from 0 to 0.10, X is defined as 0.20 to 0.35, and Z is defined as at least one doped element selected from the group consisting of:
- Zr, Hf, Sn, In, Sc, Tm, Nb, Ta, Zn, Yb, Lu, Sb, Bi, Mn, Ga, Ce, Ni, W, Cu, Fe, K, Na, Li, and Ba;
- mechanically finishing said single crystal with cuttings along zxt ±22.5°;
- coating an electrode on each of a pair of Z surfaces;
- poling said single crystal element to a first poled state in the direction along <111> cubic axis under a 500V/mm electrical field at room temperature and forming a poled single crystal element;
- and
- providing said poled single crystal element with an operable d15 shear mode;
- repoling said poled single crystal element in said first poled state to a second poled state;
- and
- said single crystal element having:
- a maximum d15 value greater than 5000 pC/N at room temperature;
- zero cross talk response resulting from a d16 response during an operation;
- and
- zero cross talk response resulting from a d11 response during an operation.
14 more elements
Dependencies are inferred from the claim text.