Semiconductor Device and Method of Forming Package-on-Package Structure Electrically Interconnected Through TSV in WLCSP

A method of making a semiconductor device, comprising:

• providing a semiconductor wafer having a plurality of semiconductor die;
• forming a first conductive layer over a first surface of the semiconductor die, each semiconductor die constituting a wafer level chip scale package (WLCSP);
• forming a conductive through silicon via (TSV) through the WLCSP;
• mounting a first semiconductor component to the WLCSP;
• forming a first interconnect structure over the first conductive layer;
• and
• mounting a second semiconductor component to the first interconnect structure, the second semiconductor component being electrically connected to the first semiconductor component and WLCSP through the first interconnect structure and TSV.

A method of making a semiconductor device, comprising:

• providing a wafer level chip scale package (WLCSP) having a first conductive layer formed over a first surface of the WLCSP;
• forming a conductive through silicon via (TSV) through the WLCSP;
• mounting a first semiconductor component to the WLCSP;
• forming a first interconnect structure over the first conductive layer;
• and
• mounting a second semiconductor component to the first interconnect structure, the second semiconductor component being electrically connected to the first semiconductor component and WLCSP through the first interconnect structure and TSV.

A semiconductor device, comprising:

• a wafer level chip scale package (WLCSP) having a first conductive layer formed over a first surface of the WLCSP;
• a conductive through silicon via (TSV) formed through the WLCSP;
• a first semiconductor component mounted to the WLCSP;
• a first interconnect structure formed over the first conductive layer;
• and
• a second semiconductor component mounted to the first interconnect structure, the second semiconductor component being electrically connected to the first semiconductor component and WLCSP through the first interconnect structure and TSV.