Semiconductor Device and Method of Forming Wafer Level Multi-Row Etched Lead Package

A method of manufacturing a semiconductor device, comprising:

• providing a base carrier having first and second opposing surfaces;
• etching the first surface of the base carrier to form a plurality of cavities and base leads between the cavities extending between the first and second surfaces;
• mounting a first semiconductor die within a cavity of the base carrier;
• forming a first insulating layer over the first semiconductor die and first surface of the base carrier and into the cavities;
• forming a first conductive layer over the first insulating layer and first surface of the base carrier;
• and
• removing a portion of the second surface of the base carrier to expose the first insulating layer and electrically isolate the base leads.

A method of manufacturing a semiconductor device, comprising:

• providing a base carrier having first and second opposing surfaces;
• etching the first surface of the base carrier to form a plurality of cavities and base leads between the cavities extending between the first and second surfaces;
• forming a first insulating layer over the first surface of the base carrier and into the cavities;
• forming a first conductive layer over the first insulating layer and first surface of the base carrier;
• forming a second insulating layer over the first insulating layer and first conductive layer;
• and
• removing a portion of the second surface of the base carrier to expose the first insulating layer and electrically isolate the base leads.

A semiconductor device made by a process, comprising:

• etching a first surface of a base carrier to form a plurality of cavities and base leads;
• mounting a first semiconductor die within a cavity of the base carrier;
• forming a first insulating layer over the first semiconductor die and first surface of the base carrier and into the cavities;
• forming a first conductive layer over the first insulating layer and first surface of the base carrier;
• forming a second insulating layer over the first insulating layer and first conductive layer;
• and
• removing a portion of a second surface of the base carrier opposite the first surface to expose the first insulating layer and electrically isolate the base leads.