Methods to Prepare Silicon-Containing Films
AssigneeAir Products and Chemicals, Inc.
InventorsLiu Yang, Manchao Xiao, Bing Han, Kirk S. Cuthill, Mark L. O'Neill
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Abstract
Described herein are methods of forming dielectric films comprising silicon, oxide, and optionally nitrogen, carbon, hydrogen, and boron. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer.
Claims22
A method for forming a dielectric film on at least one surface of a substrate, the method comprising:
- providing the at least one surface of the substrate in a reaction chamber;
- and
- introducing into the reaction chamber a silicon precursor to form the dielectric film comprising at least one selected from the group of precursors having the following Formulas I, II, and III:
- where R, R1, and R2 in Formulas I, II, and III are each independently an alkyl group, an aryl, an acyl group, or combinations thereof.
A method of forming a dielectric film comprising silicon and oxygen via an atomic layer deposition process, the method comprising the steps of:
- a. placing a substrate into an ALD reactor;
- b. introducing into the ALD reactor a silicon precursor comprising at least one selected from the group of precursors having the following Formulas I, II, and III:
- where R, R1, and R2 in Formulas I, II, and III are each independently an alkyl group, an aryl, an acyl group, or combinations thereof;
- c. purging the ALD reactor with a gas;
- d. introducing an oxygen source into the ALD reactor;
- e. purging the ALD reactor with a gas;
- and
- f. repeating the steps b through d until a desired thickness of the dielectric film is obtained wherein the dielectric film comprises from up to about 30 atomic weight % nitrogen as measured by XPS.
An electropolished stainless steel vessel with an inlet and an outlet having high purity low deadspace valves, containing tertiarybutoxysilane, iso-propoxysilane, ethoxysilane, n-butoxysilane, isobutoxysilane, methoxysilane, phenoxysilane, di-tert-butoxysilane, di-tert-pentoxysilane, diiso-propoxysilane, diethoxysilane, di-n-butoxysilane, diisobutoxysilane, dimethoxysilane, diphenoxysilane, tri-tertiary-butoxysilane, triiso-propoxysilane, triethoxysilane, tri-n-butoxysilane, triiso-butoxysilane, trimethoxysilane, or triphenoxysilane.
A silicon precursor selected from the group of precursors having the following Formula II:
- where R is selected from the group consisting of butyl, isobutyl, sec-butyl, tert-butyl, pentyl, tert-pentyl, iso-pentyl, hexyl, and aryl;
- R1 is selected from the group consisting of methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, pentyl, isopentyl, tert-pentyl, hexyl, and aryl;
- wherein R1 and R cannot both be ethyl.
The silicon precursor from the group of precursors having the following Formula III:
- where R is selected from the group consisting of butyl, isobutyl, sec-butyl, tert-butyl, pentyl, tert-pentyl, iso-pentyl, hexyl, and aryl;
- R1 and R2 are independently selected from the group consisting of methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, isopentyl, tert-pentyl, hexyl, and aryl;
- wherein R1 and R2 cannot both be ethyl.
Dependencies are inferred from the claim text.