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US 2011/0215441 A1Published application
Silicon nanostructures and method for producing the same and application thereof
AssigneeNational Taiwan University
InventorsCHING-FUH LIN, SHU-JIA SYU
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Abstract
The present invention provides silicon nanostructures and their producing method. By employing a metal-assisted chemical etching method, the bottom of the produced silicon nanostructures, connected to the silicon substrate, is porous and side etched, such that the silicon nanostructures can be easily transferred to a hetero-substrate by a physical manner.
Claims25
A method for forming a plurality of silicon nanostructures, comprising the steps of:
- providing a silicon substrate;
- forming a plurality of metal nanostructures on the silicon substrate;
- immersing the silicon substrate and the metal nanostructures in a first etching solution to etch silicon under the metal nanostructures;
- immersing the silicon substrate and the metal nanostructures in a second etching solution, resulting a side etching;
- and
- removing the metal nanostructures, the silicon nanostructures being formed.
3 more elements
A method for transferring silicon nanostructures, comprising:
- providing a silicon substrate;
- etching a surface of the silicon substrate to form a plurality of silicon nanostructures;
- deposit a metal nanostructure near the bottom of each silicon nanostructure;
- side etching the silicon nanostructures based on the metal nanostructure;
- removing the metal nanostructures from the silicon substrate;
- and
- physically transferring the silicon nanostructures to a hetero-substrate.
4 more elements
A silicon nanostructure whose root portion is side etched and has porous structures.
Dependencies are inferred from the claim text.