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US 2011/0215439 A1Published application
Epitaxial growth substrate, manufacturing method thereof, nitride-based compound semiconductor substrate, and nitride-based compound semiconductor self-supporting substrate
OwnerSatoru MORIOKAinventor
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Abstract
An epitaxial growth substrate includes: a surface not roughening over a surface roughness of 10 nm during a temperature-rise process by which a temperature increases until reaching a growth temperature of a nitride-based compound semiconductor layer, the growth temperature being 900° C. to 1050° C., wherein the nitride-based compound semiconductor layer is epitaxially grown directly on the epitaxial growth substrate at the growth temperature.
Claims6
An epitaxial growth substrate comprising:
- a surface not roughening over a surface roughness of 10 nm during a temperature-rise process by which a temperature increases until reaching a growth temperature of a nitride-based compound semiconductor layer, the growth temperature being 900° C. to 1050° C., wherein the nitride-based compound semiconductor layer is epitaxially grown directly on the epitaxial growth substrate at the growth temperature.
A manufacturing method of an epitaxial growth substrate, the manufacturing method comprising:
- performing an ingot annealing process on an ingot, the ingot annealing process in which a temperature is maintained between 1200° C. and 1400° C. for 5 hours to 20 hours;
- and
- slicing the ingot on which the ingot annealing process is performed.
Dependencies are inferred from the claim text.