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US 2011/0215436 A1Published application
Semiconductor devices including a diode structure over a conductive strap and methods of forming such semiconductor devices
AssigneeMicron Technology, Inc.
InventorsSanh D. Tang, Ming Zhang
Life of this patent
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Abstract
Semiconductor devices including at least one diode over a conductive strap. The semiconductor device may include at least one conductive strap over an insulator material, at least one diode comprising a single crystalline silicon material over a conductive material, and a memory cell on the at least one diode. The at least one diode may be formed from a single crystalline silicon material. Methods of forming such semiconductor devices are also disclosed.
Claims23
A semiconductor device, comprising:
- a conductive material over an insulator material;
- at least one diode comprising a single crystalline silicon material over the conductive material, the at least one diode comprising a first doped region overlying the conductive material and a second doped region overlying the first doped region, wherein a conductivity of the first doped region is opposite a conductivity of the second doped region;
- and
- a memory cell over the second doped region.
1 more element
A semiconductor device comprising:
- an insulator material on a first semiconductor substrate;
- an adhesion material bonded to the insulator material;
- a conductive material over the adhesion material, wherein the conductive material and the adhesion material form at least one conductive strap;
- at least one diode over the conductive strap;
- and
- a memory cell on the at least one diode.
3 more elements
A semiconductor device, comprising:
- a first semiconductor substrate having an insulator material thereon;
- an adhesion material bonded to the insulator material;
- a conductive material over the adhesion material, wherein the conductive material and the adhesion material form at least two conductive straps;
- a plurality of diodes on each of the at least two conductive straps, each diode comprising
- a single crystalline silicon material;
- and
- a plurality of memory cells, one memory cell of the plurality of memory cells on each diode of the plurality of diodes.
4 more elements
A method for fabricating a semiconductor device, comprising:
- forming a base comprising a second semiconductor substrate comprising a single crystalline silicon material having a first doped region and a second doped region, a conductive material, an adhesion material, and an insulator material overlying a first semiconductor substrate;
- forming a top electrode, a memory medium, and a bottom electrode over the second semiconductor substrate;
- removing a portion of the top electrode, the memory medium, the bottom electrode, the second semiconductor substrate, the conductive material, and the adhesion material to form at least one conductive strap having a pillar of the top electrode, the memory medium, the bottom electrode and the second semiconductor substrate thereon;
- and
- removing another portion of the top electrode, the memory medium, the bottom electrode, and the second semiconductor substrate to form at least one diode over the at least one conductive strap having a memory cell on the at least one diode.
2 more elements
A method for fabricating a semiconductor device, comprising:
- forming a base comprising a second semiconductor substrate comprising a single crystalline silicon material having a first doped region and a second doped region, a conductive material, an adhesion material, and an insulator material overlying a first semiconductor substrate;
- forming a bottom electrode over the second semiconductor substrate;
- removing a portion of the bottom electrode, the second semiconductor substrate, the conductive material, and the adhesion material to form at least one conductive strap having a pillar of the bottom electrode and the second semiconductor substrate thereon;
- and
- removing another portion of the bottom electrode and the second semiconductor substrate to form at least one diode over the at least one conductive strap wherein a portion of the bottom electrode overlies the at least one diode;
- forming a memory medium over each portion of the bottom electrode;
- and
- forming a bit line over the memory medium.
5 more elements
Dependencies are inferred from the claim text.