Semiconductor device and manufacturing method of semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsYasunori Okayama, Akihiro Yasumoto
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Abstract
According to one embodiments, an impurity that is introduced into a gate electrode and includes phosphorus or arsenic, a carbon that is introduced into the gate electrode, and an impurity diffusion layer that is formed in a semiconductor substrate to be arranged on both sides of the gate electrode are included, in which a coverage of an active region in which the gate electrode and the impurity diffusion layer are formed is 50% or more and an area thereof is 0.02 mm2 or more.
Claims20
A semiconductor device comprising:
- a gate electrode that is formed on a semiconductor substrate via a gate dielectric film;
- an impurity that is introduced into the gate electrode and includes phosphorus or arsenic;
- a carbon that is introduced into the gate electrode;
- and
- an impurity diffusion layer that is formed in the semiconductor substrate to be arranged on both sides of the gate electrode, wherein
- a coverage of an active region in which the gate electrode and the impurity diffusion layer are formed is 50% or more and an area thereof is 0.02 mm2 or more.
A semiconductor device comprising:
- a gate electrode that is formed on a semiconductor substrate via a gate dielectric film;
- an impurity that is distributed so that a concentration becomes low in an end portion compared to a central portion of the gate electrode and includes phosphorus or arsenic;
- and
- an impurity diffusion layer that is formed in the semiconductor substrate to be arranged on both sides of the gate electrode, wherein
- a coverage of an active region in which the gate electrode and the impurity diffusion layer are formed is 50% or more and an area thereof is 0.02 mm2 or more.
A method of manufacturing a semiconductor device comprising:
- forming a polycrystalline silicon film on a semiconductor substrate via a gate dielectric film;
- implanting an impurity that includes phosphorus or arsenic into the polycrystalline silicon film;
- implanting a carbon into the polycrystalline silicon film;
- forming a gate electrode by processing the polycrystalline silicon film in which the impurity that includes phosphorus or arsenic and the carbon are implanted;
- and
- forming a source/drain layer arranged on both sides of the gate electrode in the semiconductor substrate by implanting impurity into the semiconductor substrate with the gate electrode as a mask, wherein
- a coverage of an active region in which the gate electrode and the source/drain layer are formed is 50% or more and an area thereof is 0.02 mm2 or more.
A method of manufacturing a semiconductor device comprising:
- forming a polycrystalline silicon film on a semiconductor substrate via a gate dielectric film;
- implanting an impurity that includes phosphorus or arsenic into the polycrystalline silicon film;
- forming a gate electrode by processing the polycrystalline silicon film in which the impurity that includes phosphorus or arsenic is implanted;
- segregating the impurity that includes phosphorus or arsenic at an end portion of the gate electrode by performing a thermal oxidation on a surface of the gate electrode;
- removing the impurity segregated at the end portion of the gate electrode and an oxide film formed on the surface of the gate electrode;
- and
- forming a source/drain layer arranged on both sides of the gate electrode in the semiconductor substrate by implanting impurity into the semiconductor substrate with the gate electrode from which the impurity segregated at the end portion is removed as a mask, wherein
- a coverage of an active region in which the gate electrode and the source/drain layer are formed is 50% or more and an area thereof is 0.02 mm2 or more.
Dependencies are inferred from the claim text.