Semiconductor device and manufacturing method thereof
AssigneeFurukawa Electric Co., Ltd.
InventorYoshihiro SATO
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Abstract
A semiconductor device includes a semiconductor operating layer that is made of group-III nitride-based compound semiconductor and a first electrode and a second electrode formed on the semiconductor operating layer. Sheet carrier density of the semiconductor operating layer is no less than 1×1012 cm−2 and no greater than 5×1013 cm−2. Dislocation density of the semiconductor operating layer is no less than 1×108 cm−2 and no greater than 5×108 cm−2.
Claims6
A semiconductor device comprising:
- a semiconductor operating layer made of group-III nitride-based compound semiconductor;
- and
- a first electrode and a second electrode formed on the semiconductor operating layer, wherein
- sheet carrier density of the semiconductor operating layer is no less than 1×1012 cm−2 and no greater than 5×1013 cm−2, and
- dislocation density of the semiconductor operating layer is no less than 1×108 cm−2 and no greater than 5×108 cm−2.
A method of manufacturing a semiconductor device including a semiconductor operating layer made of group-III nitride-based compound semiconductor and a first electrode and a second electrode formed on the semiconductor operating layer, the method comprising:
- first forming including forming, on a substrate, the semiconductor operating layer with sheet carrier density no less than 1×1012 cm−2 and no greater than 5×1013 cm−2;
- and
- second forming including forming the first electrode and the second electrode on the semiconductor operating layer, wherein
- the first forming further includes forming a dislocation-density control layer in the semiconductor operating layer or in a layer under the semiconductor operating layer, the dislocation-density control layer controlling dislocation density of the semiconductor operating layer to be no less than 1×108 cm−2 and no greater than 5×108 cm−2.
Dependencies are inferred from the claim text.