Method of fabricating semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsKwangwook Lee, Inseak Hwang
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Abstract
A method of fabricating a semiconductor device includes forming a gate dielectric layer comprising an oxide, and at least one conductive layer on a substrate, forming a mask on the conductive layer and patterning the at least one conductive layer by etching the at least one conductive layer using the mask as an etch mask to thereby form a gate electrode, wherein the oxide of the gate dielectric layer and the material of the at least one conductive layer are selected such that a byproduct of the etching of the at least one conductive layer, formed on the mask during the etching of the at least one conductive layer, comprises an oxide having a higher etch rate with respect to an etchant than the oxide of the gate dielectric layer.
Claims20
A semiconductor device comprising:
- a substrate;
- a gate dielectric layer disposed on the substrate and comprising an oxide;
- a gate electrode disposed on the gate dielectric layer, wherein the gate electrode has opposite sidewall surfaces;
- a mask disposed on the gate electrode, wherein the mask has opposite sidewall surfaces aligned with the sidewall surfaces of the gate electrode, respectively;
- a first capping pattern extending over the sidewall surfaces of the gate electrode and the mask and comprising an oxide;
- and
- a second capping pattern disposed on the first capping pattern and comprising a nitride.
A method of fabricating a semiconductor device, comprising:
- forming a gate dielectric layer comprising an oxide, and at least one conductive layer on a substrate;
- forming a mask on the conductive layer;
- and
- patterning the at least one conductive layer by etching the at least one conductive layer using the mask as an etch mask to thereby form a gate electrode,
- wherein the oxide of the gate dielectric layer and the material of the at least one conductive layer are selected such that a byproduct of the etching of the at least one conductive layer, formed on the mask during the etching of the at least one conductive layer, comprises an oxide having a higher etch rate with respect to an etchant than the oxide of the gate dielectric layer.
The method as set forth in claim 18, wherein the forming of the second capping layer comprises forming a second capping layer comprising a nitride by atomic layer deposition (ALD).
A method of fabricating a semiconductor device, comprising:
- forming a gate dielectric layer comprising an oxide on a substrate;
- forming a first conductive layer comprising silicon on the gate dielectric layer;
- forming a second conductive layer comprising a metal or a metal compound on the first conductive layer;
- forming a mask on the second conductive layer;
- performing an anisotropic etch process on the first and second conductive layers, using the mask as an etch mask, to thereby form spaced apart gate electrodes each having a segment of the mask thereon;
- performing an etch process formulated to remove byproduct of the anisotropic etch process from the mask;
- forming a source/drain region in the substrate adjacent opposite sides of the gate electrodes;
- subsequently depositing interlayer dielectric on the substrate to such a thickness as to fill openings between the gate electrodes;
- and
- forming an contact hole in the interlayer dielectric that exposes the source/drain region;
- and
- forming an electrically conductive contact plug in the contact hole.
Dependencies are inferred from the claim text.