Semiconductor device

A semiconductor device, comprising:

• a first semiconductor region of a first conductivity type;
• a second semiconductor region of the first conductivity type formed on a first major surface of the first semiconductor region;
• a first main electrode formed on a face on a side opposite to the first major surface of the first semiconductor region;
• a third semiconductor region of a second conductivity type formed on a part of a second major surface of the second semiconductor region on a side opposite to the first semiconductor region;
• a fourth semiconductor region of the first conductivity type formed on the third semiconductor region;
• a second main electrode formed to bond to the third semiconductor region and the fourth semiconductor region;
• a control electrode formed via a gate insulating film over the third semiconductor region, the fourth semiconductor region, and the second semiconductor region;
• and
• a plurality of embedded semiconductor regions of the second conductivity type provided in a termination region, the termination region being an outside of a device region, a main electric current path being formed between the first main electrode and the second main electrode in the device region of the second semiconductor region,
• a distance between the embedded semiconductor region and the second major surface along a direction from the second major surface toward the first major surface becoming longer toward outside from the device region.