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US 2011/0215415 A1Published application
Technique for Enhancing Transistor Performance by Transistor Specific Contact Design
AssigneeGlobalfoundries Inc.
InventorsMartin Gerhardt, Ralf Richter, Thomas Feudel, Uwe Griebenow
Life of this patent
Estimating the term…
Abstract
By locally adapting the size and/or density of a contact structure, for instance, within individual transistors or in a more global manner, the overall performance of advanced semiconductor devices may be increased. Hence, the mutual interaction between the contact structure and local device characteristics may be taken into consideration. On the other hand, a high degree of compatibility with conventional process strategies may be maintained.
Claims7
-14. (canceled)
A semiconductor device, comprising:
- a first transistor having a drain region and a source region;
- a second transistor having a drain region and a source region;
- an interlayer dielectric material covering said first and second transistors;
- a first contact structure connecting to said drain region and source region of the first transistor and comprising contact elements extending through said interlayer dielectric material, said first contact structure designed according to a first layout defined by lateral target dimensions of the contact elements and target distances between the contact elements;
- and
- a second contact structure connecting to said drain region and said source region of the second transistor and comprising contact elements extending through said interlayer dielectric material, said second contact structure designed according to a second layout defined by lateral target dimensions of the contact elements and target distances between the contact elements, said second layout differing from said first layout.
3 more elements
Dependencies are inferred from the claim text.