Method for Forming an Independent Bottom Gate Connection For Buried Interconnection Including Bottom Gate of a Planar Double Gate MOSFET
AssigneeFreescale Semiconductor, Inc.
InventorsJay P. John, Thuy B. Dao
Life of this patent
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Abstract
A method is provided for making a semiconductor device, which comprises (a) providing a semiconductor structure comprising a top gate (228) and a bottom gate (240); (b) creating first (251), second and third (252) openings in the semiconductor structure, wherein the first opening exposes a portion of the bottom gate; (c) filling the first, second and third openings with a conductive material, thereby forming source (258) and drain (260) regions in the second and third openings and a conductive region (253) in the first opening; and (d) forming an electrical contact (278) to the conductive region.
Claims21
1-13. (canceled)
A semiconductor device, comprising:
- a semiconductor structure having a top gate, a bottom gate, and source and drain regions;
- and
- a conductive region in electrical contact with the bottom gate, wherein the top of the conductive region is essentially coplanar with the tops of said source and drain regions.
Dependencies are inferred from the claim text.