Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures
AssigneeMicron Technology, Inc.
InventorsSanh D. Tang, Ming Zhang, Andrew M. Bayless, John K. Zahurak
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Abstract
Methods for fabricating semiconductor-metal-on-insulator (SMOI) structures include forming an acceptor wafer including an insulator material on a first semiconductor substrate, forming a donor wafer including a conductive material and an amorphous silicon material on a second semiconductor substrate, and bonding the amorphous silicon material of the donor wafer to the insulator material of the acceptor wafer. SMOI structures formed from such methods are also disclosed, as are semiconductor devices including such SMOI structures.
Claims31
A semiconductor-metal-on-insulator structure comprising:
- an insulator material on a first semiconductor substrate;
- an amorphous silicon material bonded to the insulator material;
- a conductive material over the amorphous silicon material;
- and
- a second semiconductor substrate over the conductive material.
A semiconductor-metal-on-insulator structure comprising:
- an insulator material on a first semiconductor substrate;
- an amorphous germanium material bonded to the insulator material;
- a conductive material over the amorphous germanium material;
- and
- a second semiconductor substrate over the conductive material.
A semiconductor-metal-on-insulator structure comprising:
- an insulator material on a first semiconductor substrate;
- a conductive material over the insulator material;
- an amorphous silicon material over the conductive material;
- and
- a second semiconductor substrate over the conductive material.
A semiconductor-metal-on-insulator structure comprising:
- an insulator material on a first semiconductor substrate;
- a conductive material over the insulator material;
- at least one portion of an epitaxial silicon material and at least one portion of a silicon-germanium material, the at least one portion of the epitaxial silicon material or the at least one portion of the silicon-germanium material bonded to the insulator material;
- and
- a second semiconductor substrate over the conductive material.
A semiconductor-metal-on-insulator structure comprising:
- a first semiconductor substrate;
- at least one portion of an oxide material and at least one portion of a conductive material
- formed over the first semiconductor substrate;
- and
- a second semiconductor substrate formed over the conductive material.
A semiconductor device comprising:
- an insulator material on a first semiconductor substrate;
- an amorphous silicon material bonded to the insulator material;
- a conductive material over the amorphous silicon material;
- a second semiconductor substrate over the conductive material;
- and
- a memory cell on the second semiconductor substrate.
A method for fabricating a semiconductor-metal-on-insulator structure, comprising:
- forming an acceptor wafer comprising an insulator material formed over a first semiconductor substrate;
- forming a donor wafer comprising a conductive material over a precursor semiconductor substrate, an amorphous silicon material over the conductive material, and an implanted zone within the precursor semiconductor substrate;
- bonding the amorphous silicon material of the donor wafer to the insulator material of the acceptor wafer;
- and
- removing a portion of the precursor semiconductor substrate proximate the implanted zone within the precursor semiconductor substrate.
A method of fabricating a semiconductor device, comprising:
- forming an acceptor wafer comprising an insulator material formed over a first semiconductor substrate;
- forming a donor wafer comprising a conductive material over a precursor semiconductor substrate, an amorphous silicon material over the conductive material, and an implanted zone within the precursor semiconductor substrate;
- bonding the amorphous silicon material of the donor wafer to the insulator material of the acceptor wafer;
- removing a portion of the precursor semiconductor substrate proximate the implanted zone to form a second semiconductor substrate;
- and
- fabricating at least one memory cell on the second semiconductor substrate.
A method for fabricating a semiconductor-metal-on-insulator structure, comprising:
- forming an acceptor wafer comprising an insulator material formed over a first semiconductor substrate;
- forming a donor wafer comprising a conductive material over a precursor semiconductor substrate, an amorphous germanium material over the conductive material, and an implanted zone within the precursor semiconductor substrate;
- bonding the amorphous germanium material of the donor wafer to the insulator material of the acceptor wafer;
- and
- removing a portion of the precursor semiconductor substrate proximate the implanted zone within the precursor semiconductor substrate.
Dependencies are inferred from the claim text.