Prevention of oxygen absorption into high-k gate dielectric of silicon-on-insulator based finfet devices

Abstract

A method of forming fin field effect transistor (finFET) devices includes forming a plurality of semiconductor fins over a buried oxide (BOX) layer; performing a nitrogen implant so as to formed nitrided regions in a upper portion of the BOX layer corresponding to regions between the plurality of semiconductor fins; forming a gate dielectric layer over the semiconductor fins and the nitrided regions of the upper portion of the BOX layer; and forming one or more gate electrode materials over the gate dielectric layer; wherein the presence of the nitrided regions of upper portion of the BOX layer prevents oxygen absorption into the gate dielectric layer as a result of thermal processing.

Dependencies are inferred from the claim text.