Method and Apparatus of Forming ESD Protection Device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing Zhu, Lee-Wee Teo, Harry Hak-Lay Chuang
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Abstract
The present disclosure provides a semiconductor device having a transistor. The transistor includes a source region, a drain region, and a channel region that are formed in a semiconductor substrate. The channel region is disposed between the source and drain regions. The transistor includes a first gate that is disposed over the channel region. The transistor includes a plurality of second gates that are disposed over the drain region.
Claims20
A semiconductor device, comprising a transistor that includes:
- a source region, a drain region, and a channel region that is disposed between the source and drain regions;
- a first gate disposed over the channel region;
- and
- a plurality of second gates disposed over the drain region.
A semiconductor device, comprising a transistor that includes:
- a source region, a drain region, and a channel region that is disposed between the source and drain regions;
- a functional gate disposed over the channel region, the functional gate having a first gate length;
- and
- a dummy gate disposed over the drain region, the dummy gate having a second gate length that is smaller than the first gate length.
The semiconductor device of claim 9, wherein:
- the source region includes a lightly doped source region and a heavily doped source region;
- the drain region includes a heavily doped drain region and a lightly doped drain region, the dummy gate being disposed over the lightly doped drain region;
- the functional gate has a metal gate electrode of a first type;
- and
- the dummy gate has one of a polysilicon gate electrode and a metal gate electrode of a second type that is different from the first type.
A method of fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a first gate and a plurality of second gates over the substrate;
- and
- forming a source region and a drain region in the substrate, the source and drain regions being separated by a gap that defines a channel region;
- wherein the forming the source and drain regions is carried out in a manner so that the first gate is disposed over the channel region, and the plurality of second gates are disposed over the drain region.
Dependencies are inferred from the claim text.