Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorMueng-Ryul LEE
Life of this patent
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Abstract
A semiconductor device is provided. The semiconductor device includes a gate on a substrate, a source region at a first side of the gate, a first conductive type body region under the source region, a second conductive type drain region at a second side of the gate, a device isolation region in the substrate between the source region and the drain region and overlapping part of the gate, and a first buried layer extending in a direction from the source region to the drain region, the first buried layer under the body region, overlapping part of the device isolation region, and not overlapping the drain region.
Claims20
A semiconductor device, comprising:
- a gate on a substrate;
- a source region at a first side of the gate;
- a first conductive type body region under the source region;
- a second conductive type drain region at a second side of the gate;
- a device isolation region in the substrate between the source region and the drain region, the device isolation region overlaps part of the gate;
- and
- a first buried layer extends in a direction from the source region to the drain region, the first buried layer under the body region,
- the first buried layer overlapping part of the device isolation region, and the first buried layer not overlapping the drain region.
A semiconductor device, comprising:
- a gate on a substrate;
- a source region at the first side of the gate;
- a drain region formed at the second side of the gate;
- a body region having a first conductive type and being under the source region;
- a first well having the first conductive type and being under the body region;
- a device isolation region, adjacent to the drain region, in the substrate, the device isolation region overlapping part of the gate;
- and
- a first buried layer, extending in a direction from the source region to the drain region, the first buried layer being under the first well,
- wherein, when a reverse bias is applied to the source region and the drain region, an electric field is formed on the first side of the buried layer, and
- the second side of the device isolation region is substantially identical.
Dependencies are inferred from the claim text.