Field effect transistor and method for fabricating the same
AssigneeEudyna Devices Inc.
InventorsTadashi Watanabe, Hajime Matsuda
Life of this patent
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Abstract
A method for fabricating a field effect transistor includes: forming an insulating film provided on a semiconductor layer, the insulating film having an opening via which a surface of the semiconductor layer is exposed and including silicon oxide; forming a Schottky electrode on the insulating film and in the opening, the Schottky electrode having an overhang portion and having a first contact layer that is provided in a region contacting the insulating film and contains oxygen, and a second contact layer that is provided on the first contact layer and contains a smaller content of oxygen than that of the first contact layer; and removing the insulating film by a solution including hydrofluoric acid
Claims7
A semiconductor device comprising:
- a semiconductor layer;
- and
- a Schottky electrode provided on the semiconductor layer and composed of an overhang portion,
- the Schottky electrode having a contact layer that is provided in a region that contacts a surface of the semiconductor layer and is located below the overhang portion,
- the contact layer being made of tungsten silicide having an oxygen content of 2.6% or more.
A semiconductor device comprising:
- a semiconductor layer;
- and
- a Schottky electrode provided on the semiconductor layer and composed of an overhang portion,
- the Schottky electrode having a first contact layer that is located below the overhang portion and is made of tungsten silicide containing oxygen, and a second contact layer that is provided on the first contact layer and has a smaller oxygen content than that of the first contact layer.
Dependencies are inferred from the claim text.