Multi-component strain-inducing semiconductor regions
AssigneeIntel Corporation
InventorsTed E. Cook, JR., Bernhard Sell, Anand Murthy
Life of this patent
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Abstract
A multi-component strain-inducing semiconductor region is described. In an embodiment, formation of such a strain-inducing semiconductor region laterally adjacent to a crystalline substrate results in a uniaxial strain imparted to the crystalline substrate, providing a strained crystalline substrate. In one embodiment, the multi-component strain-inducing material region comprises a first portion and a second portion which are separated by an interface. In a specific embodiment, the concentration of charge-carrier dopant impurity atoms of the two portions are different from one another at the interface.
Claims21
A semiconductor structure comprising:
- a substrate having a strained region;
- and
- a strain-inducing material region laterally adjacent to said strained region of said substrate, wherein said strain-inducing material region comprises a first portion and a second portion separated by an interface, wherein the concentration of charge-carrier dopant impurity atoms of said second portion at said interface is greater than the concentration of charge-carrier dopant impurity atoms of said first portion at said interface by a factor of at least two, and wherein the lattice constants of said first and said second portions of said strain-inducing material region are different from the lattice constant of said strained substrate.
A semiconductor device comprising:
- a substrate;
- a gate dielectric layer above said substrate;
- a gate electrode above said gate dielectric layer;
- a pair of tip extensions on either side of said gate electrode and in said substrate, wherein said pair of tip extensions defines a channel region in said substrate;
- a pair of gate isolation spacers on either side of said gate electrode and above said pair of tip extensions;
- and
- a pair of source/drain regions on either side of said pair of gate isolation spacers and in said substrate, wherein each source/drain region of said pair of source/drain regions comprises a first portion and a second portion separated by an interface, wherein the concentration of charge-carrier dopant impurity atoms of said second portion at said interface is greater than the concentration of charge-carrier dopant impurity atoms of said first portion at said interface by a factor of at least two, wherein the lattice constants of said first and said second portions are different from the lattice constant of said substrate, wherein said pair of source/drain regions imparts a strain to said substrate, and wherein said substrate imparts a strain to said pair of source/drain regions.
Dependencies are inferred from the claim text.