Semiconductor light emitting element and method for manufacturing same

A method for manufacturing a semiconductor light emitting element, comprising:

• forming a semiconductor stacked body including a light emitting portion on a growth substrate;
• forming an electrode including a first metal film on the semiconductor stacked body;
• forming an intermediate metal film on the electrode, the intermediate metal film having a smaller linear expansion coefficient than the first metal film;
• forming a bonding portion on the intermediate metal film, the bonding portion including a second metal film having a smaller linear expansion coefficient than the intermediate metal film;
• bonding a support substrate via the bonding portion;
• and
• removing the growth substrate from the semiconductor stacked body by irradiation with laser light from a surface of the growth substrate on opposite side from the semiconductor stacked body.

A method for manufacturing a semiconductor light emitting element, comprising:

• forming a semiconductor stacked body including a light emitting portion on a growth substrate;
• forming an electrode including a first metal film on the semiconductor stacked body;
• forming an intermediate metal film on the electrode, the intermediate metal film having a smaller linear expansion coefficient than the first metal film;
• selectively etching and dividing the electrode and the intermediate metal film, and forming a bonding portion so as to cover each of the electrode and the intermediate metal film, the bonding portion including a second metal film having a smaller linear expansion coefficient than the intermediate metal film;
• bonding a support substrate via the bonding portion;
• removing the growth substrate from the semiconductor stacked body by irradiation with laser light from a surface of the growth substrate on opposite side from the semiconductor stacked body;
• and
• etching the semiconductor stacked body using the bonding portion as a stopper.