US 2011/0215363 A1 · SEMICONDUCTOR LIGHT EMITTING DEVICE

Abstract

According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first electrode, and a second electrode. The stacked structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting portion. The stacked structural body has a first major surface on a side of the second semiconductor layer. The first electrode is provided on the first semiconductor. The second electrode is provided on the second semiconductor layer. The first electrode includes a first pad portion and a first extending portion that extends from the first pad portion along a first extending direction. The first extending portion includes a first width-increasing portion. A width of the first width-increasing portion along a direction orthogonal to the first extending direction is increased from the first pad portion toward an end of the first extending portion.

Claims18

Dependent claims

A semiconductor light emitting device comprising:

a stacked structural body including:
a first semiconductor layer of a first conductivity type, the first semiconductor layer having a major face, a first portion provided on the major face and a second portion provided on the major face;
a second semiconductor layer of a second conductivity type, the second semiconductor layer provided on the first portion;
and
a light emitting portion provided between the first portion of the first semiconductor layer and the second semiconductor layer,
a first electrode provided on the second portion of the first semiconductor layer;
and
a second electrode provided on the second semiconductor layer,
the first electrode including:
a first pad portion;
and
a first extending portion extending from the first pad portion along a first extending direction,
the first extending portion including a first width-increasing portion, a width of the first width-increasing portion along a direction orthogonal to the first extending direction being increased from the first pad portion toward an end of the first extending portion.

10 more elements

A semiconductor light emitting device comprising:

a stacked structural body including:
a first semiconductor layer of a first conductivity type, the first semiconductor layer having a major face, a first portion provided on the major face and a second portion provided on the major face;
a second semiconductor layer of a second conductivity type, the second semiconductor layer provided on the first portion;
and
a light emitting portion provided between the first portion of the first semiconductor layer and the second semiconductor layer,
a first electrode provided on the second portion of the first semiconductor layer;
and
a second electrode provided on the second semiconductor layer,
the first electrode including:
a first pad portion;
and
a first extending portion extending from the first pad portion along a first extending direction,
the first extending portion including a first width-decreasing portion, a width of the first width-decreasing portion along a direction orthogonal to the first extending direction being decreased from the first pad portion toward an end of the first extending portion,
a distance between the first pad portion and an end portion of the second electrode closest to the first pad portion being longer than a distance between the first pad portion and a center of the first extending portion along the first extending direction.

11 more elements

Dependencies are inferred from the claim text.

Semiconductor light emitting device

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Semiconductor light emitting device

Life of this patent

Abstract

Claims18