Light emitting device, method of manufacturing the same, light emitting device package
AssigneeLG Innotek Co., Ltd.
InventorsHwan Hee Jeong, Sang Youl Lee, Ji Hyung Moon, June O Song, Kwang Ki Choi, Dae Sung Kang
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Abstract
Disclosed is a method of manufacturing a light emitting device. The light emitting device includes a nitride semiconductor layer, an electrode on the nitride semiconductor layer, a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer under the nitride semiconductor layer, and a conductive layer under the light emitting structure. The nitride semiconductor layer has band gap energy lower than band gap energy of the first conductive type semiconductor layer.
Claims20
A light emitting device comprising:
- a nitride semiconductor layer;
- an electrode on the nitride semiconductor layer;
- a light emitting structure under the nitride semiconductor layer, the light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and a second conductive type semiconductor layers;
- and
- a conductive layer under the light emitting structure,
- wherein the nitride semiconductor layer has band gap energy lower than band gap energy of the first conductive type semiconductor layer.
A light emitting device comprising:
- a nitride semiconductor layer including a plurality of holes;
- a current spreading layer on the nitride semiconductor layer;
- an electrode on the current spreading layer;
- a light emitting structure under the nitride semiconductor layer, the light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and a second conductive type semiconductor layers;
- and
- a conductive layer under the light emitting structure, the conductive layer including a reflective layer,
- wherein the nitride semiconductor layer has band gap energy lower than band gap energy of the first conductive type semiconductor layer.
A light emitting device package comprising:
- a body;
- a first and second lead electrode on the body;
- a light emitting device on at least one of the first and second lead electrodes;
- and
- a molding member covering the light emitting device,
- wherein the light emitting device comprises:
- a nitride semiconductor layer;
- an electrode on the nitride semiconductor layer;
- a light emitting structure under the nitride semiconductor layer, the light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and a second conductive type semiconductor layers;
- and
- a conductive layer under the light emitting structure,
- wherein the nitride semiconductor layer has band gap energy lower than band gap energy of the first conductive type semiconductor layer.
Dependencies are inferred from the claim text.