Semiconductor light-emitting device and method for manufacturing same

A semiconductor light-emitting device comprising:

• a substrate;
• an n-type semiconductor layer provided on the substrate and including a nitride semiconductor;
• a stacked body provided on the n-type semiconductor layer and including a first layer and a second layer;
• a light-emitting portion provided on the stacked body and including a barrier layer and a well layer;
• and
• a p-type semiconductor layer provided on the light-emitting portion and including a nitride semiconductor,
• the barrier layer including InbGa1-bN (0≦b<1) and having a layer thickness tb (nanometers),
• the well layer being stacked with the barrier layer, including InwGa1-wN (0<w<1, b<w), and having a layer thickness tw (nanometers),
• the first layer including InxGa1-xN (0≦x<1) and having a layer thickness tx (nanometers),
• the second layer being stacked with the first layer, including InyGa1-yN (0<y<1, x<y<w), and having a layer thickness ty (nanometers),
• average In composition ratio of the stacked body being higher than 0.4 times average In composition ratio of the light-emitting portion, assuming that the average In composition ratio of the light-emitting portion is (w×tw+b×tb)/(tW+tb), and the average In composition ratio of the stacked body is (x×tx+y×ty)/(tx+ty), and
• the layer thickness tb of the barrier layer being 10 nanometers or less.

A method for manufacturing a semiconductor light-emitting device, comprising:

• forming an n-type semiconductor layer including a nitride semiconductor on a substrate;
• forming a stacked body including a first layer and a second layer on the n-type semiconductor layer;
• forming a light-emitting portion including a barrier layer and a well layer on the stacked body;
• and
• forming a p-type semiconductor layer on the light-emitting portion,
• the forming the stacked body including:
• forming the first layer including InxGa1-xN (0≦x<1) with a thickness of layer thickness tx nanometers on the n-type semiconductor layer;
• and
• forming the second layer including InyGa1-yN (0<y<1, x<y) with a thickness of layer thickness ty nanometers on the first layer,
• the forming the light-emitting portion including:
• forming the barrier layer including InbGa1-bN (0≦b<1, b<w) with a layer thickness tb nanometers having a value of 10 nanometers or less on the stacked body;
• and
• forming the well layer including InwGa1-wN (0<w<1, y<w) with a thickness of layer thickness tw nanometers on the barrier layer,
• at least one of the forming the stacked body and the forming the light-emitting portion being performed so that average In composition ratio of the stacked body is higher than 0.4 times average In composition ratio of the light-emitting portion,
• assuming that the average In composition ratio of the stacked body is (x×tx+y×ty)/(tx+ty), and the average In composition ratio of the light-emitting portion is (w×tw+b×tb)/(tw+tb).