LOW POWER GRADED BASE SiGe HBT LIGHT MODULATOR
OwnerHenry D. Dardy, Jong Ru Guo +2inventors
InventorsHenry D. Dardy, Jong Ru Guo, John F. McDonald, S. Mary Ann Dardy
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Abstract
A graded base silicon-germanium (SiGe) heterojunction bipolar transistor (HBT)-based electro-optical (EO) modulator includes a graded base HBT and a light beam directed under the graded base HBT and passing through the free carrier plasma within for the purpose of inducing a phase modulation of the light beam.
Claims13
A graded base silicon-germanium (SiGe) heterojunction bipolar transistor (HBT)-based electro-optical (EU) modulator, comprising:
- a graded base HBT;
- and
- a light beam directed under the graded base HBT and passing through the free carrier plasma within for the purpose of inducing a phase modulation of the light beam.
In a graded base silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) comprising:
- a substrate;
- an intrinsic base region having a silicon buffer layer comprising silicon formed on said substrate, and a composition-ratio graded base layer formed on the silicon buffer layer comprising silicon and germanium and where a composition ratio of the germanium to the silicon varies in a thickness direction of the composition-ratio graded base layer;
- and
- an extrinsic base region having an extrinsic base formation layer comprising silicon formed on said substrate adjacent to the silicon buffer layer;
- the improvement comprising a light source positioned inside the HBT for imparting an electro-optical modulator functionality to the HBT.
A graded base silicon-germanium (SiGe) heterojunction bipolar transistor (HBT)-based electro-optical (EO) modulator, comprising:
- a graded base HBT;
- and
- a light source positioned inside the graded base HBT.
Dependencies are inferred from the claim text.