Semiconductor light emitting element and method for manufacturing same
AssigneePanasonic Corporation
InventorsNaomi Anzue, Gaku Sugahara, Yoshiaki Hasegawa, Akihiko Ishibashi, Toshiya Yokogawa
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Abstract
A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.
Claims9
A semiconductor light-emitting device comprising:
- a semiconductor substrate containing an n-type impurity and being made of silicon carbide or a nitride semiconductor;
- an n-type semiconductor layer provided on a main surface of the semiconductor substrate;
- an active layer provided on the n-type semiconductor layer;
- a p-type semiconductor layer provided on the active layer;
- a p-electrode in contact with the p-type semiconductor layer;
- and
- an n-electrode in contact with a surface of the semiconductor substrate opposite from the main surface, wherein,
- the n-electrode includes a first n-electrode which covers the entire surface of the semiconductor substrate opposite from the main surface and a second n-electrode provided on the first n-electrode so as to expose at least a portion of a periphery of the first n-electrode.
A production method for a semiconductor light-emitting device, comprising:
- step (a) of forming an n-type semiconductor layer, an active layer, and a p-type semiconductor layer in this order on a main surface of a semiconductor substrate which is made of silicon carbide or a nitride semiconductor;
- step (b) of forming, on the p-type semiconductor layer, a p-electrode which is in contact with the p-type semiconductor layer;
- step (c) of forming a first n-electrode which covers an entire surface of the semiconductor substrate opposite from the main surface;
- step (d) of forming a second n-electrode on the first n-electrode;
- and
- step (e) of, after step (d), cleaving the semiconductor substrate, the n-type semiconductor layer, the active layer, and the p-type semiconductor layer along a cleavage direction, and splitting the first n-electrode, wherein,
- at step (d), the second n-electrode is formed so as to expose a portion of the first n-electrode that extends along the cleavage direction.
Dependencies are inferred from the claim text.