Termination and contact structures for a high voltage GaN-based heterojunction transistor
AssigneePower Integrations, Inc.
InventorsMichael Murphy, Milan Phophristic
Life of this patent
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Abstract
A semiconductor device is provided that includes a substrate, a first active layer disposed over the substrate, and a second active layer disposed on the first active layer. The second active layer has a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer. A termination layer, which is disposed on the second active layer, includes InGaN. Source, gate and drain contacts are disposed on the termination layer.
Claims25
A semiconductor device comprising:
- a substrate;
- a first active layer disposed over the substrate;
- a second active layer disposed on the first active layer, the second active layer having a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer;
- a layer disposed on the second active layer to passivate a surface of the semiconductor device, the layer including InGaN
- a gate contact disposed on the layer;
- and
- a source contact and a drain contacts respectively disposed in first and second recesses that extend through the layer.
A semiconductor device, comprising:
- a substrate;
- a first active layer disposed over the substrate;
- a second active layer disposed on the first active layer, the second active layer having a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer;
- a layer disposed on the second active layer to passivate a surface of the semiconductor device, the layer being selected from the group consisting of Fe-doped GaN, Si-doped GaN, FeN and SiN;
- a gate contact disposed on the layer;
- and
- a source contact and a drain contacts respectively disposed in first and second recesses that extend through the layer.
15-20. (canceled)
A high electron mobility transistor (HEMT) comprising:
- a substrate;
- a first active layer disposed over the substrate;
- a second active layer disposed on the first active layer, the second active layer having a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer;
- a plurality of layers disposed on the second active layer to passivate a surface of the HEMT, the layers comprising a GaN layer.
Dependencies are inferred from the claim text.