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US 2011/0215338 A1Published application
Semiconductor devices with heterojunction barrier regions and methods of fabricating same
AssigneeCree, Inc.
InventorQingchun Zhang
Life of this patent
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Abstract
An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a junction, such as a Schottky junction, with the drift region, and a p-type junction barrier region on the silicon carbide layer. The p-type junction barrier region includes a p-type polysilicon region forming a P-N heterojunction with the drift region, and the p-type junction barrier region is electrically connected to the contact. Related methods are also disclosed.
Claims28
An electronic device, comprising:
- a silicon carbide layer including an n-type drift region therein;
- a contact forming a Schottky junction with the drift region;
- and
- a p-type junction barrier region on the silicon carbide layer, the p-type junction barrier region including a p-type polysilicon region forming a P-N heterojunction with the drift region and the p-type junction barrier region being electrically connected to the contact.
1 more element
An electronic device, comprising:
- a drift region having a first conductivity type;
- a contact on the drift region and forming a junction with the drift region;
- and
- a junction barrier region on the drift region, the junction barrier region having a second conductivity type opposite the first conductivity type and including a heterojunction barrier region on the drift region, wherein the heterojunction barrier region forms a P-N heterojunction with the drift region and is in electrical contact with the contact.
1 more element
A method of forming an electronic device, comprising:
- providing a drift region having a first conductivity type;
- providing a heterojunction barrier region on the drift region, the heterojunction barrier region comprising a material different from the drift region and having a conductivity type opposite the conductivity type of the drift region and forming a P-N heterojunction with the drift region;
- and
- providing a contact on the drift region and on the heterojunction barrier region, the contact forming a Schottky junction with the drift region and forming an ohmic junction with the heterojunction barrier region.
1 more element
An electronic device, comprising:
- a silicon carbide layer including a drift region having a first conductivity type;
- a contact on a surface of the drift region and forming a junction with the drift region;
- and
- a guard ring in contact with the surface of the silicon carbide layer adjacent to the junction, the guard ring having a conductivity type opposite the conductivity type of the drift region and including a material forming a heterojunction with the silicon carbide layer.
1 more element
Dependencies are inferred from the claim text.