Laminated structure, multilayer wiring board, active matrix substrate, image display apparatus, and method for manufacturing laminated structure

A laminated structure manufactured by a laminated structure manufacturing method, the laminated structure comprising:

• a wettability variable layer containing a wettability variable material whose surface energy changes when energy is applied thereto and including at least a high surface energy area having high surface energy and a low surface energy area having low surface energy;
• and
• a conductive layer disposed on the high surface energy area,
• wherein the laminated structure manufacturing method includes a first step of forming the wettability variable layer containing the wettability variable material, a second step of applying the energy to parts of the wettability variable layer and thereby forming the high surface energy area including a first region and a second region adjacent to each other and separated by the low surface energy area therebetween and having higher surface energy than the low surface energy area, a third step of supplying a droplet of a functional fluid containing a conductive material selectively to at least the first region, and a fourth step of drying the supplied functional fluid and thereby forming, on the high surface energy area, the conductive layer including the conductive material, and in the third step, the droplet of the functional fluid is supplied by inkjet printing, and a center position of the supplied droplet is determined in such a manner as to satisfy both Equation (1) and Equation (2), where
• X<±(L+2S−D−2α)/2 (here, L+2S>D+2α) is Equation (1);
• and
• X<±(L+D−2α)/2 (here, L+2D>D+2α) is Equation (2);
• wherein X is a distance between a center position of the first region and the center position of the droplet, D is a diameter of the droplet when travelling, α is variation in a landing position of the droplet, L is width of the first region, and S is a gap between the first and the second regions.

An active matrix substrate comprising:

• a transistor including a gate electrode, a gate insulating layer, a source electrode, a drain electrode, a capacitor electrode and a semiconductor layer;
• a gate signal line extending in one direction from the gate electrode;
• a source signal line extending from the source electrode, in a direction substantially perpendicular to the direction in which the gate signal line extends;
• a common signal line extending from the capacitor electrode, substantially parallel to the direction in which the gate signal line or the source signal line extends;
• and
• a laminated structure manufactured by a laminated structure manufacturing method and including a wettability variable layer that containes a wettability variable material whose surface energy changes when energy is applied thereto and includes at least a high surface energy area having high surface energy and a low surface energy area having low surface energy, and a conductive layer disposed on the high surface energy area, the laminated structure manufacturing method including a first step of forming the wettability variable layer containing the wettability variable material, a second step of applying the energy to parts of the wettability variable layer and thereby forming the high surface energy area including a first region and a second region adjacent to each other and separated by the low surface energy area therebetween and having higher surface energy than the low surface energy area, a third step of supplying a droplet of a functional fluid containing a conductive material selectively to at least the first region, and a fourth step of drying the supplied functional fluid and thereby forming, on the high surface energy area, the conductive layer including the conductive material, wherein in the third step, the droplet of the functional fluid is supplied by inkjet printing, and a center position of the droplet in the supplication is determined in such a manner as to satisfy both Equation (1) and Equation (2), where
• X<±(L+2S−D−2α)/2 (here, L+2S>D+2α) is Equation (1);
• and
• X<±(L+D−2α)/2 (here, L+2D>D+2α) is Equation (2);
• wherein X is a distance between a center position of the first region and the center position of the droplet, D is a diameter of the droplet when travelling, α is variation in a landing position of the droplet, L is width of the first region, and S is a gap between the first and the second regions,
• wherein the conductive layer disposed on the high surface energy area is used as at least one of the gate electrode, the source electrode, the drain electrode, the capacitor electrode, the gate signal line, the source signal line and the common signal line.