Semiconductor device and method for manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsTomonori AOYAMA, Yusuke Oshiki, Kiyotaka Miyano
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Abstract
According to one embodiment, a method for manufacturing a semiconductor device, wherein an amorphous semiconductor film comprising a microcrystal is annealed using a microwave, to crystallize the amorphous semiconductor film comprising the microcrystal using the microcrystal as a nucleus.
Claims20
A method for manufacturing a semiconductor device, wherein an amorphous semiconductor film comprising a microcrystal is annealed using a microwave, to crystallize the amorphous semiconductor film comprising the microcrystal using the microcrystal as a nucleus.
A semiconductor device comprising:
- a substrate;
- a polycrystalline semiconductor film formed on the substrate and comprising a channel region, and a source region and a drain region between which the channel region is sandwiched;
- a gate insulating film formed on the channel region;
- and
- a gate electrode formed on the gate insulating film,
- wherein the polycrystalline semiconductor film is an aggregate of crystals with a grain size of between 50 nm and 10 μm.
A semiconductor device comprising:
- a polycrystalline semiconductor film formed on a surface of the first insulating film;
- a second insulating film formed on a surface of the polycrystalline semiconductor film;
- and
- a semiconductor layer formed on a surface of the second insulating film,
- wherein the polycrystalline semiconductor film is an aggregate of crystals with a grain size of between 50 nm and 10 μm.
Dependencies are inferred from the claim text.